Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD. (8th February 2010)

• Record Type: Journal Article
• Authors: Zatryb, G.; Podhorodecki, A.; Misiewicz, J.; Wojcik, J.; Mascher, P.
• Other Names: Capobianco John A. Academic Editor.
• Is Part Of: Journal of nanotechnology. Volume 2009(2009)
• Publication Date: 2010-02-08
• Subjects: Nanotechnology -- Periodicals; Nanotechnology; Nanotechnology; Periodicals; Periodicals; 620.5
• DOI: 10.1155/2009/769142
• Languages: English
• ISSNs: 1687-9503

Abstract

Abstract : Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped withEr 3 + ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc toEr 3 + ions is discussed.