Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation. (1st November 2010)

• Record Type: Journal Article
• Authors: Kuo, Chin-Chiuan; Liu, Chi-Chang; Jeng, Yaug-Fea; Lin, Chung-Chih; Liou, Yeuh-Yeong; He, Ju-Liang
• Other Names: Jin Wanqin Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2010(2010)
• Publication Date: 2010-11-01
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2010/840316
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Indium molybdenum oxide (IMO) films were deposited onto the polyethersulfone (PES) substrates by ion-beam-assisted evaporation (IBAE) deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222). The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10 −4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughnessR pv of 8.75 nm and an average visible transmittance of 78.7%.