Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition. (11th July 2011)

• Record Type: Journal Article
• Authors: Cheng, Chin-Lung; Liu, Chien-Wei; Dai, Bau-Tong; Lee, Ming-Yen
• Other Names: Lin Gong Ru Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2011(2011)
• Publication Date: 2011-07-11
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2011/125846
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2 /n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D -band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2 as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage( I d - V d ), drain current versus gate voltage( I d - V g ), mobility, subthreshold slope (SS), and transconductance( G m ), were obtained.