Study on the Effect of Nano-SiO2 in ULSI Silicon Substrate Chemical Mechanical Polishing Process. (17th January 2007)

• Record Type: Journal Article
• Authors: Yuling, Liu; Juan, Wang; Ming, Sun; Chenglin, Liu
• Is Part Of: Journal of nanomaterials. Volume 2006(2006)
• Publication Date: 2007-01-17
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/JNM/2006/25467
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Both process and mechanical of silicon substrate chemical mechanical polishing (CMP) are studied in detail, and the effects of experiments designed indicate that nano-SiO 2 grinding particles seem to be acted as catalyzer besides the grinding action during the CMP process. This is different from the traditional function. As a result, in the condition of low pH, the nano-SiO 2 slurry can be recycled. In the meanwhile, the removal rate can gain stability and pH value does not change obviously.