Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications. (25th October 2015)

• Record Type: Journal Article
• Authors: Lee, Ho-Jun; Min, Jung-Wook; Lee, Kye-Jin; Choi, Kwang-Yong; Eum, Jung-Hyun; Lee, Dong-Kun; Bae, Si-Young
• Other Names: Alameh Kamal Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2015(2015)
• Publication Date: 2015-10-25
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2015/142096
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Recent needs of semiconductor lighting sources have pursued diverse functionalities such as flexibility and transparency under high quantum efficiency. Inorganic/organic hybrid light-emitting diodes (LEDs) are one way to meet these requirements. Here, we report on flexible III-nitride-based LEDs and the improvement of their electrical and optical properties. To realize high light emission power and stable current operation, high-quality epitaxy and elaborate chip processing were performed. The fabricated flexible LEDs showed over threefold optical output power compared to normal LEDs on Si and had comparable forward voltage and series resistances.