Enhancement of Two-Dimensional Electron-Gas Properties by Zn Polar ZnMgO/MgO/ZnO Structure Grown by Radical-Source Laser Molecular Beam Epitaxy. (25th October 2015)

• Record Type: Journal Article
• Authors: Meng, Li; Zhang, Jingwen; Li, Qun; Hou, Xun
• Other Names: Liao Meiyong Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2015(2015)
• Publication Date: 2015-10-25
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2015/694234
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : A Zn polar ZnMgO/MgO/ZnO structure with low Mg compositionZn 1 - x Mg x O layer ( x = 0.05) grown on a-plane (11–20) sapphire by radical-source laser molecular beam epitaxy was reported. The insertion of a thin (1 nm) MgO layer between ZnMgO and ZnO layers in the ZnMgO/ZnO 2DEG structures results in an increase of 2DEG sheet density and affects electron mobility slightly. The carrier concentration reached a value as high as 1.1 × 10 13 cm −2, which was confirmed by C - V measurements. A high Hall mobility of 3090 cm 2 /Vs at 10 K and 332 cm 2 /Vs at RT was observed from Zn0.95 Mg0.05 O/MgO/ZnO heterostructure. The choice of the thickness of MgO was discussed. The dependence of carrier sheet density of 2DEG on ZnMgO layer thickness was calculated in theory and the theoretical prediction and experimental results agreed well.