MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System. (23rd November 2015)

• Record Type: Journal Article
• Authors: Singh, Nandan; Ho, Charles Kin Fai; Tina, Guo Xin; Chandra Mohan, Manoj Kumar; Lee, Kenneth Eng Kian; Wang, Hong; Lam, Huy Quoc
• Other Names: Liao Meiyong Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2015(2015)
• Publication Date: 2015-11-23
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2015/436851
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrication is completed with standard processing techniques with BCB passivation. DC and RF measurements are carried out using a single mode fiber at 1.55 μ m. For a 24- μ m-diameter device (with diode ideality factor of 1.34), the dark current is 32.5 nA and the 3-dB bandwidth is ≫20 GHz at a reverse bias of 5 V, which are comparable to the theoretical values. High photocurrent of over 150.0 mA from larger diameter (>60 μ m) devices is obtained. The maximum DC responsivity at 1.55 μ m wavelength is 0.51 A/W, without antireflection coating. These photodiodes play a key role in the progress of the future THz communication systems.