Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes. (11th August 2016)
- Record Type:
- Journal Article
- Title:
- Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes. (11th August 2016)
- Main Title:
- Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes
- Authors:
- Hsueh, Hsu-Hung
Ou, Sin-Liang
Peng, Yu-Che
Cheng, Chiao-Yang
Wuu, Dong-Sing
Horng, Ray-Hua - Other Names:
- Shih Wei-Heng Academic Editor.
- Abstract:
- Abstract : The flat-top pyramid patterned sapphire substrates (FTP-PSSs) have been prepared for the growth of GaN epilayers and the fabrication of lateral-type light-emitting diodes (LEDs) with an emission wavelength of approximately 470 nm. Three kinds of FTP-PSSs, which were denoted as FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C, respectively, were formed through the sequential wet etching processes. The diameters of circle areas on the top regions of these three FTP-PSSs were 1, 2, and 3 μ m, respectively. Based on the X-ray diffraction results, the full-width at half-maximum values of rocking curves at (002) plane for the GaN epilayers grown on conventional sapphire substrate (CSS), FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 412, 238, 346, and 357 arcsec, while these values at (102) plane were 593, 327, 352, and 372 arcsec, respectively. The SpeCLED-Ratro simulation results reveal that the LED prepared on FTP-PSS-A has the highest light extraction efficiency than that of the other devices. At an injection current of 350 mA, the output powers of LEDs fabricated on CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 157, 254, 241, and 233 mW, respectively. The results indicate that both the crystal quality of GaN epilayer and the light extraction of LED can be improved via the use of FTP-PSS, especially for the FTP-PSS-A.
- Is Part Of:
- Journal of nanomaterials. Volume 2016(2016)
- Journal:
- Journal of nanomaterials
- Issue:
- Volume 2016(2016)
- Issue Display:
- Volume 2016, Issue 2016 (2016)
- Year:
- 2016
- Volume:
- 2016
- Issue:
- 2016
- Issue Sort Value:
- 2016-2016-2016-0000
- Page Start:
- Page End:
- Publication Date:
- 2016-08-11
- Subjects:
- Nanostructured materials -- Periodicals
Nanotechnology -- Periodicals
Nanomatériaux
Nanostructured materials
Nanotechnology
Nanostructures
Nanotechnology
Periodicals
Fulltext
Internet Resources
Periodicals
620.115 - Journal URLs:
- https://www.hindawi.com/journals/jnm/ ↗
http://www.hindawi.com/GetJournal.aspx?journal=JNM ↗ - DOI:
- 10.1155/2016/2701028 ↗
- Languages:
- English
- ISSNs:
- 1687-4110
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD Digital store
- Ingest File:
- 10266.xml