Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering. (8th August 2016)

• Record Type: Journal Article
• Authors: Ou, Sin-Liang; Lai, Feng-Min; Yuan, Lun-Wei; Cheng, Da-Long; Kao, Kuo-Sheng
• Other Names: Ho Ying-Lung D. Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2016(2016)
• Publication Date: 2016-08-08
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2016/6250640
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO) films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value ofR / r is introduced. Here, r is the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position ofR / r is fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10 −3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA) at 600°C with N2 atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10 −3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications.