The Investigation of Field Plate Design in 500 V High Voltage NLDMOS. (23rd April 2015)

• Record Type: Journal Article
• Authors: Liu, Donghua; Xu, Xiangming; Jin, Feng; Duan, Wenting; Wang, Huihui; Shi, Jing; Yao, Yuan; Hu, Jun; Qian, Wensheng; Wang, Pengfei; Zhang, David Wei
• Other Names: Zhang Rui Academic Editor.
• Is Part Of: Advances in condensed matter physics. Volume 2015(2015)
• Publication Date: 2015-04-23
• Subjects: Condensed matter -- Periodicals; Condensed matter; Periodicals; 530.41
• DOI: 10.1155/2015/834545
• Languages: English
• ISSNs: 1687-8124

Abstract

Abstract : This paper presents a 500 V high voltage NLDMOS with breakdown voltage (V B D ) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μ m drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (R s p = 7.88 ohm * mm 2 ) are achieved.