Cite
HARVARD Citation
Alfieri, G. et al. (2019). Deep level study of beryllium implanted MOCVD homoepitaxial GaN. Japanese journal of applied physics. p. . [Online].
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Alfieri, G. et al. (2019). Deep level study of beryllium implanted MOCVD homoepitaxial GaN. Japanese journal of applied physics. p. . [Online].