Theoretical analysis of an on-chip integration of a III–V laser with a Ge photodetector using Si waveguides on patterned SOI substrates. (22nd March 2019)

• Record Type: Journal Article
• Authors: Cheng, Zhuo; Wang, Jun; Yang, Zeyuan; Zhang, Yidong; Wang, Wei; Yin, Haiying; Huang, Yongqing; Ren, Xiaomin
• Is Part Of: Laser physics letters. Volume 16:Number 4(2019:Apr.)
• Publication Date: 2019-03-22
• Subjects: optical integration -- square microcavity laser -- Ge photodetector -- Si waveguides -- mode quality factor -- optical absorption efficiency; Lasers -- Periodicals; Physics -- Periodicals; 621.366
• DOI: 10.1088/1612-202X/ab0c8c
• Languages: English
• ISSNs: 1612-2011

Abstract

Abstract: We proposed and theoretically analyzed a new on-chip optical integration scheme that a direct epitaxial 1.3 μ m III–V square microcavity laser is integrated with a Ge photodetector through Si waveguides on the patterned silicon-on-insulator substrates. The integrated laser is directly grown on the patterned silicon-on-insulator substrates by the selective area growth method and the Ge photodetector is directly grown on the upper Si layer. Through the numerical calculation and analysis, a high mode quality factor of 1804 and an optical coupling efficiency of 11.8% for the microcavity laser are obtained. The static characteristics of the laser are also investigated by rate equations. The Ge photodetector has an optical absorption efficiency more than 98% with the device length of 5 μ m.