Cite
HARVARD Citation
Ahmad, N. et al. (2013). A 0.8 V 0.23 nW 1.5 ns Full-Swing Pass-Transistor XOR Gate in 130 nm CMOS. Active and passive electronic components. p. . [Online].
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Ahmad, N. et al. (2013). A 0.8 V 0.23 nW 1.5 ns Full-Swing Pass-Transistor XOR Gate in 130 nm CMOS. Active and passive electronic components. p. . [Online].