SiGe HBTs Optimization for Wireless Power Amplifier Applications. (29th December 2010)

• Record Type: Journal Article
• Authors: Mans, Pierre-Marie; Jouan, Sebastien; Fregonese, Sebastien; Vandelle, Benoit; Pache, Denis; Arnaud, Caroline; Maneux, Cristell; Zimmer, Thomas
• Other Names: Marbell Marvin Academic Editor.
• Is Part Of: Active and passive electronic components. Volume 2010(2010)
• Publication Date: 2010-12-29
• Subjects: Electronics -- Periodicals; Passive components -- Periodicals; Electronic apparatus and appliances -- Periodicals; 621.381505
• DOI: 10.1155/2010/542572
• Languages: English
• ISSNs: 0882-7516

Abstract

Abstract : This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT -BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in order to improve the fT values at high injection levels.