Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga2O3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio. Issue 19 (10th April 2019)

• Record Type: Journal Article
• Authors: Wu, Zhengyuan; Jiang, Zhuoxun; Song, Pengyu; Tian, Pengfei; Hu, Laigui; Liu, Ran; Fang, Zhilai; Kang, Junyong; Zhang, Tong‐Yi
• Is Part Of: Small. Volume 15:Issue 19(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-04-10
• Subjects: β‐Ga2O3 -- microstructure -- nanosheet -- nanowire‐seeded hierarchical growth; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201900580
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: 2D β‐Ga2 O3 nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well‐controlled orientation have not been reported yet. The present study demonstrates how to grow single‐crystalline ultrathin quasi‐hexagonal β‐Ga2 O3 nanosheets with nanowire seeds and proposes a hierarchy‐oriented growth mechanism. The hierarchy‐oriented growth is initiated by epitaxial growth of a single‐crystalline ( 2 − 01 ) β‐Ga2 O3 nanowire on a GaN nanocrystal and followed by homoepitaxial growth of quasi‐hexagonal (010) β‐Ga2 O3 nanosheets. The undoped 2D (010) β‐Ga2 O3 nanosheet field effect transistor has a field‐effect electron mobility of 38 cm 2 V −1 s −1 and an on/off current ratio of 10 7 with an average subthreshold swing of 150 mV dec −1 . The from‐nanowires‐to‐nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the field of nanomaterial synthesis and growth and the area of nanoelectronics as well. Abstract : We demonstrate how to grow single‐crystalline ultrathin β‐Ga2 O3 nanosheets with nanowire seeds and propose a hierarchy‐oriented growth mechanism. The undoped (010) β‐Ga2 O3 nanosheet field effect transistor shows high field‐effect electron mobility and on/off ratio. The from‐nanowires‐to‐nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the fields of nanomaterials and nanoelectronics as well.