A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation. (2001)

• Record Type: Journal Article
• Authors: El Abbassi, A.; Amhouche, Y.; Raïs, K.; Rmaily, R.
• Is Part Of: Active and passive electronic components. Volume 24:Number 1(2001)
• Page Start: 23
• Page End: 29
• Publication Date: 2001
• Subjects: MOSFET -- Velocity saturation -- Pinch off -- Conductance -- Charge; Electronics -- Periodicals; Passive components -- Periodicals; Electronic apparatus and appliances -- Periodicals; 621.381505
• DOI: 10.1155/2001/34065
• Languages: English
• ISSNs: 0882-7516

Abstract

Abstract : In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristicI d 0 ( V d ) . avoiding velocity saturation phenomena, can be obtained from ohmic characteristicI d ( V g ) and compared with the experimental characteristicI d ( V d ) .