Four Level Simulation of MOSFET. (1998)
- Record Type:
- Journal Article
- Title:
- Four Level Simulation of MOSFET. (1998)
- Main Title:
- Four Level Simulation of MOSFET
- Authors:
- Doja, M. N.
Moinuddin,
Kumar, Umesh - Abstract:
- Abstract : In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.
- Is Part Of:
- Active and passive electronic components. Volume 21:Number 3(1998)
- Journal:
- Active and passive electronic components
- Issue:
- Volume 21:Number 3(1998)
- Issue Display:
- Volume 21, Issue 3 (1998)
- Year:
- 1998
- Volume:
- 21
- Issue:
- 3
- Issue Sort Value:
- 1998-0021-0003-0000
- Page Start:
- 231
- Page End:
- 257
- Publication Date:
- 1998
- Subjects:
- MOSOFT -- channel effect -- VGB
Electronics -- Periodicals
Passive components -- Periodicals
Electronic apparatus and appliances -- Periodicals
621.381505 - Journal URLs:
- https://www.hindawi.com/journals/apec/ ↗
- DOI:
- 10.1155/1998/38280 ↗
- Languages:
- English
- ISSNs:
- 0882-7516
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD Digital store
- Ingest File:
- 10191.xml