Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors. (1994)
- Record Type:
- Journal Article
- Title:
- Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors. (1994)
- Main Title:
- Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors
- Authors:
- Caddemi, A.
Sannino, M. - Abstract:
- Abstract : In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters by means of an original automatic noise figure measuring system only. Measurements have been performed over the 1–4 GHz frequency range and at different bias conditions. The extracted model refers to the performance of the chip device since the package and bond parasitics have been accurately de-embedded by proper calibration techniques.
- Is Part Of:
- Active and passive electronic components. Volume 17:Number 3(1994)
- Journal:
- Active and passive electronic components
- Issue:
- Volume 17:Number 3(1994)
- Issue Display:
- Volume 17, Issue 3 (1994)
- Year:
- 1994
- Volume:
- 17
- Issue:
- 3
- Issue Sort Value:
- 1994-0017-0003-0000
- Page Start:
- 167
- Page End:
- 175
- Publication Date:
- 1994
- Subjects:
- Electronics -- Periodicals
Passive components -- Periodicals
Electronic apparatus and appliances -- Periodicals
621.381505 - Journal URLs:
- https://www.hindawi.com/journals/apec/ ↗
- DOI:
- 10.1155/1994/38702 ↗
- Languages:
- English
- ISSNs:
- 0882-7516
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD Digital store
- Ingest File:
- 10178.xml