Structural and Optical Properties of In2S3 Thin Films Prepared by Flash Evaporation. (2004)

• Record Type: Journal Article
• Authors: Bouabid, K.; Ihlal, A.; Outzourhit, A.; Ameziane, E. L.
• Is Part Of: Active and passive electronic components. Volume 27:Number 4(2004)
• Page Start: 207
• Page End: 214
• Publication Date: 2004
• Subjects: Electronics -- Periodicals; Passive components -- Periodicals; Electronic apparatus and appliances -- Periodicals; 621.381505
• DOI: 10.1080/08827510310001648899
• Languages: English
• ISSNs: 0882-7516

Abstract

Abstract : In 2 S 3 thin films were deposited by flash evaporation ofIn 2 S 3 powder. The effect of annealing in vacuum and under sulphur atmosphere on the structural and optical properties of these films was investigated. X-ray diffraction studies reveal that the as-deposited films are amorphous. The formation ofβ -In 2 S 3 phase is obtained after annealing under vacuum at 693 K. Heat treatments under sulphur pressure lead to the formation of the above phase at a less annealing temperature (573 K). The energy dispersive X-ray (EDX) analysis reveals that the sulphurized films are nearly stoichiometric and those annealed in vacuum are sulphur deficient. Optical transmission spectra showed a slight shift of the absorption edge towards lower wavelengths. The optical gap value varied between 2.4 and 3 eV as a function of the film thickness and the annealing temperature.