Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets. (1991)

• Record Type: Journal Article
• Authors: Geoffroy, C.; Campet, G.; Menil, F.; Portier, J.; Salardenne, J.; Couturier, G.
• Is Part Of: Active and passive electronic components. Volume 14:Number 3(1991)
• Page Start: 111
• Page End: 118
• Publication Date: 1991
• Subjects: Electronics -- Periodicals; Passive components -- Periodicals; Electronic apparatus and appliances -- Periodicals; 621.381505
• DOI: 10.1155/1991/85965
• Languages: English
• ISSNs: 0882-7516

Abstract

Abstract : Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2 or SnO2 –SnF2 mixtures, ceramics obtained by casting either an aqueous SnO2 –SnF2 slurry or a suspension of tin oxide in molten tin fluoride. The samples were prepared in oxygen-argon gas mixtures in which the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The optical and electrical properties of the obtained thin films have been studied and compared to those of the films obtained by spray technique.