Graphene Post-Processing. (March 2019)

• Record Type: Journal Article
• Authors: Tincu, B; Avram, A; Tucureanu, V; Matei, A; Marculescu, C; Burinaru, T; Comanescu, F; Popescu, M; Avram, M
• Is Part Of: IOP conference series. Volume 485(2019)
• Publication Date: 2019-03
• Subjects: Materials science -- Periodicals; 620.1105
• DOI: 10.1088/1757-899X/485/1/012027
• Languages: English
• ISSNs: 1757-8981

Abstract

Abstract: Graphene is a two-dimensional wonder material, used for electronic and medical applications. To date, various synthesis method of graphene layers is proposed, such as: SiC epitaxial growth, Chemical Vapor Deposition (CVD) and mechanical exfoliation. Graphene single layer can be rapidly produced by CVD. Although the transfer process on different substrates has been researched, a post-processing step after graphene growth for understanding influence of radical of carbon unreacted in graphene properties has not been studied. Deposition of graphene on metal transition substrate involves many reactions, and is not clear what happens with the unreacted methane. The scanning electron microscopy is the best method to visualize this unreacted species as a thin film which covers the graphene layer. The post-processing of graphene after CVD is a crucial step for the performance of graphene-based devices. The graphene film is characterized morphologically and structurally before and after the post-processing step, with the scope of removing the unreacted film and investigating the influence of this step on the graphene properties. To identify the specific vibration of graphene layer before and after post-processing step, Raman spectroscopy has been used. Here, we investigate the quality of CVD graphene before and after removing unreacted hydrocarbon, to better understand the importance of post-processing process for device applications, before the graphene transfer.