In-situ growing D-A polymer from the surface of reduced graphene oxide: Synthesis and nonvolatile ternary memory effect. (March 2019)

• Record Type: Journal Article
• Authors: Li, Dongqi; Zhang, Bin; Zhu, Chunxuan; Tian, Xiangyu; Zhao, Zhizheng; Chen, Yu
• Is Part Of: Carbon. Volume 143(2019)
• Page Start: 851
• Page End: 858
• Publication Date: 2019-03
• Subjects: Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2018.11.083
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstract: As the cornerstone of the modern information technology, the development of memory devices with high speed, large capacity, long life time, low power consumption and ease of operation characteristics is beneficial for the fast revolution of the digital world. Using soluble 4-bromobenzene functionalized reduced graphene oxide (RGBr) as two dimensional template, in-situ growing of a novel donor-accept type conjugated polymer "poly[(1, 4-diethynyl- benzene)- alt -(4, 4′-(quinoxaline-2, 3-diyl)bis( N, N -diphenylaniline))](PDQ)" from the RGO surface has been successfully realized via the palladium-catalyzed Sonogashira-Hagihara polymerization. The resultant material called as RGO-PDQ is highly soluble in some common organic solvents. The nonvolatile ternary rewritable memory performance has been observed in an electronic device with the RGO-PDQ film sandwiched between the Al and ITO electrodes. The switching threshold voltages on the ON-1 and ON-2 states are −0.74 and −1.44 V, respectively. The achieved current ratio of OFF: ON-1: ON-2 is about 1: 10: 10 4 . The memory effect of the Al/RGO-PDQ/ITO device on the ON-1state can be assigned to the contribution of the PDQ moieties in the structure of RGO-PDQ. By using conductive atomic force microscopy (C-AFM) technique, the conductive nature of the RGO-PDQ film-based device was in-situ observed. Graphical abstract: The RGO-PDQ film sandwiched between ITO and Al electrodes exhibits a ternary electrical switching and nonvolatile memory effect, with an OFF: ON-1: ON-2 current ratio of 1: 10: 10 4 .