Polycrystalline transistor with multiple thresholds. (January 2019)

• Record Type: Journal Article
• Authors: Kabir, HM Dipu; Chan, Mansun
• Is Part Of: Microelectronics journal. Volume 83(2019)
• Page Start: 126
• Page End: 130
• Publication Date: 2019-01
• Subjects: Polycrystalline semiconductor -- Mobility variation -- Threshold voltage variation -- Grains -- Grain boundary -- Display FETs -- Threshold voltage -- TFT; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2018.12.002
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: This paper presents the co-existence of multiple thresholds in a single polycrystalline transistor with examples, reasons, and fabrication results. Polycrystalline transistors are traditionally represented and modeled as a transistor of a single threshold voltage. During the characterization, researchers often find that a polycrystalline transistor exhibits multiple thresholds. We first exemplify existences of two/multiple threshold voltages at current-voltage characteristics of several published literature. Then we theoretically prove the reason for the co-existence of multiple thresholds in a polycrystalline transistor. Finally, we present our fabricated organic polycrystalline transistors exhibiting multiple thresholds. This work may help future device researchers in studying devices and researching for novel applications.