Influence of oxygen pressure on the electrical properties of Mn-doped Bi0.5Na0.5TiO3BaTiO3 thin films by pulsed laser deposition. Issue 10 (July 2019)

• Record Type: Journal Article
• Authors: Jiao, Shan; Zhang, Yi; Duan, Zhihua; Wang, Tao; Tang, Yanxue; Zhao, Xiangyong; Sun, Dazhi; Shi, Wangzhou; Wang, Feifei
• Is Part Of: Ceramics international. Volume 45:Issue 10(2019)
• Page Start: 13518
• Page End: 13522
• Publication Date: 2019-07
• Subjects: Thin film -- Lead-free -- Ferroelectric -- Pulsed laser deposition; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2019.04.056
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Ferroelectric Mn-doped 0.935Bi0.5 Na0.5 TiO3 -0.065BaTiO3 (MnBNBT) thin films were fabricated on (111)Pt/Ti/SiO2 /Si substrates via pulsed laser deposition under different oxygen pressures. (100)-preferred orientation and dense films with perovskite structure were grown. The MnBNBT thin film deposited at an optimized oxygen pressure of 25 Pa exhibited a well-defined ferroelectric P - E loop with an average remnant polarization P r of 27 μC/cm 2, a coercive field E c of 5.7 kV/mm, and a high relative dielectric constant of 1295. The leakage current characteristics were assessed, demonstrating that the ohmic conduction behaviors and Fowler-Nordheim tunneling were the main mechanisms of the MnBNBT thin films. Piezoelectric force microscopy indicated that the MnBNBT films possessed favorable local piezoelectric responses and multidomain states. The results suggest that the lead-free thin film produced is potentially applicable in ferroelectric and piezoelectric devices.