Cite
HARVARD Citation
Oh, H. et al. (n.d.). Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses. Semiconductor science and technology. p. . [Online].
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Oh, H. et al. (n.d.). Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses. Semiconductor science and technology. p. . [Online].