Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method. (27th March 2019)

• Record Type: Journal Article
• Authors: Yamada, Jumpei; Usami, Shigeyoshi; Ueda, Yuki; Honda, Yoshio; Amano, Hiroshi; Maruyama, Takahiro; Naritsuka, Shigeya
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 4(2019)
• Publication Date: 2019-03-27
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/aafe70
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In order to advance the mass production of graphene devices, it is beneficial to avoid the difficulty graphene transfer process. Direct precipitation of graphene using a tungsten capping layer is convenient for this purpose, and is quite simple and compatible with conventional semiconductor fabrication processes. In this study, multilayer graphene was directly precipitated on a wafer of GaN-based blue LEDs to form a transparent electrode. The fabricated LED exhibited superior I – V characteristics and emitted blue luminescence around the probe of the electrode.