Epitaxial growth of SiGe on Si substrate by printing and firing of Al–Ge mixed paste. (26th March 2019)

• Record Type: Journal Article
• Authors: Fukami, Shogo; Nakagawa, Yoshihiko; Hainey, Mel F.; Gotoh, Kazuhiro; Kurokawa, Yasuyoshi; Nakahara, Masahiro; Dhamrin, Marwan; Usami, Noritaka
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 4(2019)
• Publication Date: 2019-03-26
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab00e5
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We report on a simple liquid-phase epitaxy (LPE) of SiGe on Si (100) substrate based on printing and firing. LPE was performed using an Al–Ge mixed paste screen-printed on a Si (100) substrate followed by annealing above the Al–Ge eutectic temperature in air or in an Ar atmosphere. In the case of annealing in air at 800 °C, SiGe was formed between the mixed paste and the surface of the Si substrate. However, a wave-like oxide film was confirmed at the SiGe/Si interface, which hindered the growth of SiGe. On the other hand, annealing in the Ar atmosphere at 800 °C led to the successful formation of a more continuous, thicker SiGe film by suppressing the oxidation of Al. It can be concluded that LPE growth using printing and firing of Al–Ge mixed paste is a suitable method to grow SiGe with a low-cost and simple high-speed process.