Ultraviolet–visible light photoluminescence induced by stacking faults in 3C–SiC nanowires. (25th March 2019)

• Record Type: Journal Article
• Authors: Yu, Hailing; Wang, Qiang; Yang, Lei; Dai, Bing; Zhu, Jiaqi; Han, Jeicai
• Is Part Of: Nanotechnology. Volume 30:Number 23(2019)
• Publication Date: 2019-03-25
• Subjects: SiC nanowires -- mixture of polytypes -- optical properties -- stacking faults; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ab084f
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: The relationship between stacking faults and optical properties in 3C–SiC nanowires is reported in this paper. 3C–SiC nanowires prepared at 900 °C have high density stacking faults. The stacking faults cause a change in the Si–C atom stacking sequence and form nanosegments of 4H–SiC and 6H–SiC in the 3C–SiC matrix. The mixture of polytypes leads to a shift in the peaks and the addition of peaks in both Raman spectra and photoluminescence (PL) spectra. The Raman peaks are centered at 785 cm −1 and at 935 cm −1 and correspond to the transverse optic mode and the longitudinal optic mode of 3C–SiC, respectively. The PL peaks are blueshifted and the emissions are in the ultraviolet–visible light band.