Metal‐Guided Selective Growth of 2D Materials: Demonstration of a Bottom‐Up CMOS Inverter. Issue 18 (25th March 2019)

• Record Type: Journal Article
• Authors: Chiu, Ming‐Hui; Tang, Hao‐Ling; Tseng, Chien‐Chih; Han, Yimo; Aljarb, Areej; Huang, Jing‐Kai; Wan, Yi; Fu, Jui‐Han; Zhang, Xixiang; Chang, Wen‐Hao; Muller, David A.; Takenobu, Taishi; Tung, Vincent; Li, Lain‐Jong
• Is Part Of: Advanced materials. Volume 31:Issue 18(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-03-25
• Subjects: 2D materials -- chemical vapor deposition -- heterojunctions -- molybdenum diselenide -- selective growth -- transition metal dichalcogenides -- tungsten diselenide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201900861
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: 2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large‐area electronics and circuits strongly relies on wafer‐scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal‐guided selective growth (MGSG), is reported. The success of control over the transition‐metal‐precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p‐ and n‐type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom‐up complementary metal‐oxide‐semiconductor inverter based on p‐type WSe2 and n‐type MoSe2 is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position. Abstract : Dissimilar transition metal dichalcogenides (TMDs) are grown concurrently and location‐selectively by a new method. Precise control over the transition‐metal‐precursor vapor pressure allows successful lateral and vertical heterojunction growth, as well as growth of p‐ and n‐type TMDs at desired locations. A new synthetic strategy for future (opto)electronic applications is thus provided.