Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface. (22nd November 2018)

• Record Type: Journal Article
• Authors: Mao, Huiwu; Zhou, Zhe; Wang, Xiangjing; Ban, Chaoyi; Ding, Yamei; Sun, Tao; Yin, Yuhang; Liu, Zhengdong; Liu, Juqing; Huang, Wei
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 5(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-11-22
• Subjects: interfacial engineering -- nanoparticle decoration -- polymer memory devices -- resistive switching voltage -- wrinkle surfaces; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201800503
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Control of resistive switching voltage in nonvolatile memory devices plays a critical role in building commercial ultra‐low power data storage technology. Here, an effective strategy to control the resistive switching voltage in polymer memory devices by interfacial engineering is presented. By creating a wrinkled surface in reduced graphene oxide (rGO) film as the conductive electrode, an electrical bistable phenomenon is observed in polymer diode with this rGO electrode, with the feature of a write‐once‐read‐many‐times nonvolatile memory effect. By further employing silver nanoparticles and controlling their density at the wrinkled rGO electrode/polymer interface, the optimized device exhibits a high performance nonvolatile memory effect with an ultra‐low switching voltage of 0.9 V, high ON/OFF ratio of 1000, and desirable long retention time over 10 4 s. To the best knowledge, the value of switching voltage is much lower than that of previous related polymer memory devices. This study paves a new way toward ultra‐low power manufacturing of nonvolatile polymer memory devices. Abstract : An effective strategy combining wrinkle surface and nanoparticle decoration is proposed to control the resistive switching voltage in polymer memory devices. By manipulating the nanoparticle density on wrinkled surface of reduced graphene oxide electrode, the optimized device exhibits high performance nonvolatile memory with an ultra‐low switching voltage, high ON/OFF ratio, long retention time, and excellent reproducibility.