Cite
HARVARD Citation
Horiuchi, T. et al. (2019). The Effect of Crucible Rotation and Crucible Size in Top‐Seeded Solution Growth of Single‐Crystal Silicon Carbide. Crystal research and technology. 54 (5), p. n/a. [Online].
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Horiuchi, T. et al. (2019). The Effect of Crucible Rotation and Crucible Size in Top‐Seeded Solution Growth of Single‐Crystal Silicon Carbide. Crystal research and technology. 54 (5), p. n/a. [Online].