Polymer Memory Devices: Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface (Adv. Electron. Mater. 5/2019). (3rd May 2019)

• Record Type: Journal Article
• Authors: Mao, Huiwu; Zhou, Zhe; Wang, Xiangjing; Ban, Chaoyi; Ding, Yamei; Sun, Tao; Yin, Yuhang; Liu, Zhengdong; Liu, Juqing; Huang, Wei
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 5(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-05-03
• Subjects: interfacial engineering -- nanoparticle decoration -- polymer memory devices -- resistive switching voltage -- wrinkle surfaces; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201970024
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : In article number1800503, Juqing Liu, Wei Huang, and coworkers propose an effective strategy combining wrinkle surface and nanoparticle decoration to control the resistive switching voltage in polymer memory devices. By manipulating the nanoparticle density on the wrinkled surface of a reduced graphene oxide electrode, the optimized device exhibits high performance nonvolatile memory with an ultra‐low switching voltage, high ON/OFF ratio, long retention time, and excellent reproducibility.