Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms‐Range Flash Lamp Annealing. Issue 8 (28th December 2018) - Duan, Juanmei
Abstract : With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III–V compound semiconductors, with complementary metal‐oxide‐semiconductor (CMOS) technology. In this study, the formation of shallow n–p and p–n junctions in GaAs utilizing ion implantation of S and Zn, respectively, followed by millisecond‐range flash lamp annealing (FLA) is presented. The distribution of implanted elements obtained by secondary ion mass spectrometry (SIMS) shows that the FLA process can effectively suppress the diffusion of dopants. Simultaneously, the ms‐range annealing is sufficient to recrystallize the implanted layer and to activate the dopants. Formation of p–n and n–p junctions is confirmed by current–voltage characteristics. The ratio of reverse to forward current can reach up to 1.7 × 10 7 in the n‐GaAs:Zn case. Abstract : The shallow junction in GaAs is made by ion implantation followed by millisecond‐range flash lamp annealing. The sub‐seconds annealing recrystallizes the implanted layer and effectively suppresses the dopant diffusion.