Metrology for graphene and 2D materials. (27th July 2016)

• Record Type: Journal Article
• Authors: Pollard, Andrew J
• Is Part Of: Measurement science & technology. Volume 27:Number 9(2016:Sep.)
• Publication Date: 2016-07-27
• Subjects: graphene -- Raman spectroscopy -- tip-enhanced -- defects -- secondary ion mass spectrometry -- characterisation -- 2D materials; Physical measurements -- Periodicals; Scientific apparatus and instruments -- Periodicals; Equipment and Supplies -- Periodicals; Science -- instrumentation -- Periodicals; Technology -- instrumentation -- Periodicals; Mesures physiques -- Périodiques; Physical measurements; Scientific apparatus and instruments; Periodicals; 502.87
• DOI: 10.1088/0957-0233/27/9/092001
• Languages: English
• ISSNs: 0957-0233

Abstract

Abstract: The application of graphene, a one atom-thick honeycomb lattice of carbon atoms with superlative properties, such as electrical conductivity, thermal conductivity and strength, has already shown that it can be used to benefit metrology itself as a new quantum standard for resistance. However, there are many application areas where graphene and other 2D materials, such as molybdenum disulphide (MoS2 ) and hexagonal boron nitride (h-BN), may be disruptive, areas such as flexible electronics, nanocomposites, sensing and energy storage. Applying metrology to the area of graphene is now critical to enable the new, emerging global graphene commercial world and bridge the gap between academia and industry. Measurement capabilities and expertise in a wide range of scientific areas are required to address this challenge. The combined and complementary approach of varied characterisation methods for structural, chemical, electrical and other properties, will allow the real-world issues of commercialising graphene and other 2D materials to be addressed. Here, examples of metrology challenges that have been overcome through a multi-technique or new approach are discussed. Firstly, the structural characterisation of defects in both graphene and MoS2 via Raman spectroscopy is described, and how nanoscale mapping of vacancy defects in graphene is also possible using tip-enhanced Raman spectroscopy (TERS). Furthermore, the chemical characterisation and removal of polymer residue on chemical vapour deposition (CVD) grown graphene via secondary ion mass spectrometry (SIMS) is detailed, as well as the chemical characterisation of iron films used to grow large domain single-layer h-BN through CVD growth, revealing how contamination of the substrate itself plays a role in the resulting h-BN layer. In addition, the role of international standardisation in this area is described, outlining the current work ongoing in both the International Organization of Standardization (ISO) and the International Electrotechnical Commission (IEC).