A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification. (1st July 2019)

• Record Type: Journal Article
• Authors: Chuang, Lu-Chung; Maeda, Kensaku; Shiga, Keiji; Morito, Haruhiko; Fujiwara, Kozo
• Is Part Of: Scripta materialia. Number 167(2019)
• Page Start: 46
• Page End: 50
• Publication Date: 2019-07-01
• Subjects: Grain boundary -- Multicrystalline Si -- Directional solidification; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2019.03.037
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: The generation of a {112}Σ3 grain boundary (GB) was observed in situ from the decomposition of a Σ9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Σ3 GB. This mechanism is different from that for the growth of {111}Σ3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the {112} plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification. Graphical abstract: Unlabelled Image