Cite
HARVARD Citation
Zettler, J. et al. (2015). Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process. Nanotechnology. p. . [Online].
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Zettler, J. et al. (2015). Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process. Nanotechnology. p. . [Online].