Global dissipativity of memristor-based complex-valued neural networks with time-varying delays. Issue 3 (April 2016)

• Record Type: Journal Article
• Authors: Rakkiyappan, R.; Velmurugan, G.; Li, Xiaodi; O'Regan, Donal
• Is Part Of: Neural computing & applications. Volume 27:Issue 3(2016)
• Page Start: 629
• Page End: 649
• Publication Date: 2016-04
• Subjects: Memristor -- Complex-valued neural networks (CVNNs) -- Dissipativity -- M-matrix theory -- Time delays -- Linear matrix inequality (LMI); Neural networks (Computer science) -- Periodicals; Neural circuitry -- Periodicals; Artificial intelligence -- Periodicals; Neural Networks (Computer) -- Periodicals; Réseaux neuronaux (Informatique) -- Périodiques; Réseaux nerveux -- Périodiques; Intelligence artificielle -- Périodiques; 006.32
• DOI: 10.1007/s00521-015-1883-2
• Languages: English
• ISSNs: 0941-0643

Abstract

Abstract Memristor is the new model two-terminal nonlinear circuit device in electronic circuit theory. This paper deals with the problem of global dissipativity and global exponential dissipativity for memristor-based complex-valued neural networks (MCVNNs) with time-varying delays. Sufficient global dissipativity conditions are derived from the theory of M-matrix analysis, and the globally attractive set as well as the positive invariant set is established. By constructing Lyapunov–Krasovskii functionals and using a linear matrix inequality technique, some new sufficient conditions on global dissipativity and global exponential dissipativity of MCVNNs are derived. Finally, two numerical examples are presented to demonstrate the effectiveness of our proposed theoretical results.