P‐117: Inverted Quantum Dot Light‐Emitting Diodes with MgZnO Modified Electron Transport Layer. Issue 1 (2nd June 2017)

• Record Type: Journal Article
• Authors: Sun, Yizhe; Peng, Huiren; Chen, Shuming; Zhang, Shengdong
• Is Part Of: Digest of technical papers. Volume 48:Issue 1(2017)
• Page Start: 1699
• Page End: 1701
• Publication Date: 2017-06-02
• Subjects: Quantum dots -- QLED -- Electron transport layer -- Modification layer; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.11991
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Inverted quantum‐dot light‐emitting diodes (QLEDs) with high efficiency are demonstrated by utilizing MgZnO modified electron transport layers (ETLs). MgZnO nanoparticles (NPs) with thickness of 10 nm are inserted between ZnO and quantum dots, which reduces the injection of electrons and thus improves the balance of charge injection. Moreover, exciton quenching by ZnO nanoparticles is largely alleviated. Consequently, maximum current efficiency of 11.5 cd/A is achieved and a 36% improvement of external quantum efficiency (EQE) is also obtained in comparison with conventional devices without MgZnO modification layer.