21‐4: Distinguished Paper: Experimental Decomposition of the Positive Bias Temperature Stress‐induced Instability in Self‐aligned Coplanar InGaZnO Thin‐film Transistors and its Modeling based on the Multiple Stretched‐exponential Functions. Issue 1 (2nd June 2017)

• Record Type: Journal Article
• Authors: Kim, Dae Hwan; Choi, Sungju; Jang, Juntae; Kang, Hara; Kim, Dong Myong; Choi, Sung-Jin; Kim, Yong-Sung; Oh, Saeroonter; Baeck, Ju Heyuck; Bae, Jong Uk; Park, Kwon-Shik; Yoon, Soo Young; Kang, In Byeong
• Is Part Of: Digest of technical papers. Volume 48:Issue 1(2017)
• Page Start: 298
• Page End: 301
• Publication Date: 2017-06-02
• Subjects: amorphous InGaZnO thin-film transistors -- top-gate self-aligned coplanar structure -- experimental decomposition of positive-bias temperature stress instability; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.11616
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Decomposition of the positive gate‐bias temperature stress (PBTS)‐induced instability into contributions of distinct mechanisms is experimentally demonstrated in top‐gate self‐aligned coplanar amorphous InGaZnO thin‐film transistors and validated by reproducing the PBTS time‐evolution of I‐V characteristics through the TCAD simulation into which the extracted density‐of‐states and charge trapping are incorporated.