Cite
HARVARD Citation
Su, M. et al. (n.d.). Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications. Advanced science. 3 (9), p. n/a. [Online].
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Su, M. et al. (n.d.). Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications. Advanced science. 3 (9), p. n/a. [Online].