Accelerated Optimization of TiO2/Sb2Se3 Thin Film Solar Cells by High‐Throughput Combinatorial Approach. Issue 20 (14th July 2017)

• Record Type: Journal Article
• Authors: Chen, Chao; Zhao, Yang; Lu, Shuaicheng; Li, Kanghua; Li, Yang; Yang, Bo; Chen, Wenhao; Wang, Liang; Li, Dengbing; Deng, Hui; Yi, Fei; Tang, Jiang
• Is Part Of: Advanced energy materials. Volume 7:Issue 20(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-07-14
• Subjects: high‐throughput -- Sb2Se3 -- solar cells -- TiO2; Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201700866
• Languages: English
• ISSNs: 1614-6832

Abstract

Abstract: Sb2 Se3, a V2 ‐VI3 compound semiconductor, has attracted extensive research attention in photovoltaics due to its non‐toxicity, low cost and earth‐abundant constituents. Herein, a combinatorial approach to optimize the performance of TiO2 /Sb2 Se3 thin film photovoltaics is employed. By simultaneously conducting a series of experiments in parallel rather than one after another, combinatorial strategy increases experimental throughput and reduces personnel costs. Key parameters such as TiO2 thickness, post‐annealing temperature and Sb2 Se3 thickness are identified as 65 nm, 450 °C and 850 nm through the combinatorial approach. Finally, in combination with (NH4 )2 S back surface cleaning, TiO2 /Sb2 Se3 solar cells with 5.6% efficiency and decent stability are obtained, showcasing the power of high‐throughput strategy for accelerating the optimization of Sb2 Se3 photovoltaics. Abstract : A combinatorial strategy is used to accelerate the optimization of TiO2 thickness and postannealing temperature as well as Sb2 Se3 thickness in Sb2 Se3 thin film photovoltaics. By this high‐throughput combinatorial approach, combined with (NH4 )2 S back surface treatment, the TiO2 /Sb2 Se3 solar cells achieve a device efficiency of 5.6% with impressive damp‐heat and light‐soaking stability.