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HARVARD Citation
Miccoli, C. et al. (2019). Study of oxide trapping in SiC MOSFETs by means of TCAD simulations. Materials science in semiconductor processing. pp. 40-43. [Online].
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Miccoli, C. et al. (2019). Study of oxide trapping in SiC MOSFETs by means of TCAD simulations. Materials science in semiconductor processing. pp. 40-43. [Online].