Electrical properties of Ge1Se2.5 and Ge0.6Se2.5Sn0.4 glasses. (28th March 2017)

• Record Type: Journal Article
• Authors: Deepika, ; Singh, Hukum; Saxena, N S
• Is Part Of: Materials research express. Volume 4:Number 3(2017)
• Publication Date: 2017-03-28
• Subjects: chalcogenides -- Ge–Se–Sn -- electrical conductivity -- hopping condcution -- activation energy; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/aa6435
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: The present paper reports the electrical properties of Ge1 Se2.5 and Ge0.6 Se2.5 Sn0.4 glasses at room as well as elevated temperatures. The samples were prepared using the melt quenching technique and the characterization was done using x-ray diffraction. The temperature dependence of the samples was studied through I – V characteristics and the data obtained were analyzed to obtain the dc electrical conductivity. The measurements were recorded in the temperature range 298–423 K on a Keithley electrometer. The results indicate that a thermally activated process is responsible for conduction in the temperature range 423–373 K, while in temperature range 373–298 K transport of charge carriers takes place via variable range hopping. Mott's 3D VRH model was applied to explain the hopping conduction occurring in these samples in the temperature range 373–298 K.