Atomic scale investigation of Si and Ce‐rich nanoclusters in Ce‐doped SiO1.5 thin films. Issue 12 (26th October 2015)

• Record Type: Journal Article
• Authors: Beainy, G.; Weimmerskirch‐Aubatin, J.; Stoffel, M.; Vergnat, M.; Rinnert, H.; Etienne, A.; Pareige, P.; Talbot, E.
• Is Part Of: Physica status solidi. Volume 12:Issue 12(2015:Dec.)
• Page Start: 1313
• Page End: 1316
• Publication Date: 2015-10-26
• Subjects: atom probe tomography -- photoluminescence -- Si nanocrystals -- cerium -- silicon oxides; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510081
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: The optical properties and the nanoscale structure of Ce‐doped SiO1.5 thin films elaborated by evaporation were investigated by photoluminescence and atom probe tomography. Strong Ce‐related blue luminescence is observed on the 1100 °C annealed sample. Atom probe tomography experiments give evidence of the formation of a cerium silicate having a stoichiometry compatible with Ce2 Si2 O7 . Moreover, we further observe the formation of pure Si nanocrystals (Si‐ncs) which results from the phase separation of the SiO1.5 film. No optical signal from Si‐ncs was observed at least for the 3% Ce‐doped SiO1.5 film considered in this study. We analyze the size distribution of both Si‐ncs and Ce2 Si2 O7 particles. Finally, the Si and Ce diffusion coefficients were estimated based on atom probe tomography characterizations. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)