Effect on electrical performance of titanium co‐sputtered IZO active‐channel thin‐film transistor. Issue 8 (21st August 2015)

• Record Type: Journal Article
• Authors: Park, Chanhee; Lim, Yooseong; Ha, Seungsoo; Im, Yongjin; Jang, Minhyung; Choi, Seung‐il; Park, Ji‐in; Yi, Moonsuk
• Is Part Of: Journal of the Society for Information Display. Volume 23:Issue 8(2015:Aug.)
• Page Start: 371
• Page End: 376
• Publication Date: 2015-08-21
• Subjects: thin‐film transistor -- transparent oxide semiconductor -- indium zinc oxide -- titanium -- sputtering; Information display systems -- Periodicals; 621.38154205
• DOI: 10.1002/jsid.321
• Languages: English
• ISSNs: 1071-0922

Abstract

Abstract: We investigated the electrical performance of Ti–IZO active‐channel layer thin‐film transistors (TFTs) using a radio frequency (RF) magnetron co‐sputtering system to co‐sputter IZO and Ti targets. The samples were fabricated by changing the RF gun power of the IZO. The other parameters such as the RF gun power of the Ti target, oxygen partial pressure [O2 /(Ar + O2 )], and initial and process pressure of the chamber were unchanged. Unlike the sample sputtered only with IZO, the thin films of the Ti–IZO samples could control the oxygen vacancy because Ti reacts with the oxygen in the IZO. Therefore, Ti–IZO thin films can suppress the carrier concentration and thus have an effect on the electrical performance of TFTs. Abstract : We investigated the electrical performance and surface characteristics of Ti‐IZO thin‐film transistors (TFTs) using radio frequency co‐sputtering system. The performance—especially in terms of electrical stability—was fairly good because Ti can react to O2 in IZO and suppress O2 vacancy. As a result, Ti has an effect on the performance of TFTs. Moreover, the transmittance of the Ti‐IZO was sufficiently high for use in transparent displays.