Space charge layer effects in silicon studied by in situ surface transport. (19th March 2019)

• Record Type: Journal Article
• Authors: Edler, Frederik; Miccoli, Ilio; Pfnür, Herbert; Tegenkamp, Christoph
• Is Part Of: Journal of physics. Volume 31:Number 21(2019)
• Publication Date: 2019-03-19
• Subjects: space charge layer -- surface transport -- silicon surface; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/ab094e
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments. However, the surface sensitivity of this technique to atomic structures comes along with the control of bulk related electron paths and internal interfaces. Here we analyzed the role of Schottky-barriers and space charge layers for Si-surfaces. By means of a metal submonolayer coverage deposited on vicinal Si(1 1 1), we reliably accessed subsurface transport channels via angle- and temperature-dependent in situ transport measurements. In particular, high temperature treatments performed under ultra high vacuum conditions led to the formation of surface-near bulk defects, e.g. SiC-interstitials. Obviously, these defects act as p-type dopants and easily overcompensate lightly n-doped Si substrates.