Cite
HARVARD Citation
Lee, H. et al. (n.d.). A 1‐W Ka‐band power amplifier using 0.15‐μm InGaAs/GaAs E‐mode pHEMT technology. Microwave and optical technology letters. 61 (7), pp. 1706-1711. [Online].
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Lee, H. et al. (n.d.). A 1‐W Ka‐band power amplifier using 0.15‐μm InGaAs/GaAs E‐mode pHEMT technology. Microwave and optical technology letters. 61 (7), pp. 1706-1711. [Online].