Indene‐Based Donor‐Acceptor Type Small Molecular Semiconductors for High‐Performance n‐Channel Transistors. Issue 14 (11th April 2019)

• Record Type: Journal Article
• Authors: Wei, Qibing; Wang, Jinlong; Wu, Hongzhuo; Qiao, Xiaolan; Zhao, Baoguo; Li, Hongxiang
• Is Part Of: ChemistrySelect. Volume 4:Issue 14(2019)
• Page Start: 4217
• Page End: 4221
• Publication Date: 2019-04-11
• Subjects: Organic semiconductor -- transistor -- organic electronics -- mobility; Chemistry -- Periodicals; 540.5
• DOI: 10.1002/slct.201803952
• Languages: English
• ISSNs: 2365-6549

Abstract

Abstract: It is a great challenge to design n‐channel donor‐acceptor (D−A) type small molecules because of the lack of strong electron withdrawing acceptor unit. Herein, 3‐(dicyanomethylidene)‐indan‐1‐one (IC ) and 1, 3‐bis(dicyanomethylidene)‐indene (IDC ) based D−A type small molecular organic semiconductorsIC–DDTPTI andIDC‐DDTPTI are synthesized and characterized. Both compounds have low‐lying LUMO energy levels, especially forIDC‐DDTPTI with LUMO energy level lower than −4.0 eV. Thin film transistor characteristics showIC–DDTPTI displays ambipolar transistor behavior with balanced hole and electron mobility. The electron mobility is 0.40 cm 2 V −1 s −1 and the hole mobility reaches 0.18 cm 2 V −1 s −1 .IDC‐DDTPTI exhibits unipolar n‐channel character with an electron mobility of 0.027 cm 2 V −1 s −1 . These results highlight the applications ofIC andIDC units in high performance D−A type n‐channel organic semiconductors. Abstract : Donor‐acceptor type small molecular organic semiconductors IC–DDTPTI and IDC‐DDTPTI are synthesized and characterized. IC–DDTPTI displays ambipolar transistor behavior with balanced hole and electron mobility. The hole mobility is 0.18 cm 2 V −1 s −1 and the electron mobility reaches 0.40 cm 2 V −1 s −1 . IDC‐DDTPTI exhibits unipolar n‐channel character with an electron mobility of 0.027 cm 2 V −1 s −1