Configurable multi-state non-volatile memory behaviors in Ti3C2 nanosheets. Issue 15 (8th February 2019)

• Record Type: Journal Article
• Authors: Ding, Guanglong; Zeng, Kelin; Zhou, Kui; Li, Zongxiao; Zhou, Ye; Zhai, Yongbiao; Zhou, Li; Chen, Xiaoli; Han, Su-Ting
• Is Part Of: Nanoscale. Volume 11:Issue 15(2019)
• Page Start: 7102
• Page End: 7110
• Publication Date: 2019-02-08
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c9nr00747d
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : A multi-state information storage state could be achieved via a configurable SET process with non-volatile devices based on Ti3 C2 nanosheets. Abstract : MXenes have drawn considerable attention in both academia and industry due to their attractive properties, such as a combination of metallic conductivity and surface hydrophilicity. However, to the best of our knowledge, the potential use of MXenes in non-volatile resistive random access memories (RRAMs) has rarely been reported. In this paper, we first demonstrated a RRAM device with MXene (Ti3 C2 ) as the active component. The Ti3 C2 -based RRAM exhibited typical bipolar switching behavior, long retention characteristics, low SET voltage, good mechanical stability and excellent reliability. By adjusting different compliance currents in the SET process, multi-state information storage was achieved. The charge trapping assisting hopping process is considered to be the main mechanism of resistive switching for this fabricated Ti3 C2 -based RRAM, which was verified by conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). Moreover, this flexible Ti3 C2 -based RRAM, with good mechanical stability and long retention properties, was successfully fabricated on a plastic substrate. Ti3 C2 -based RRAMs may open the door to additional applications and functionalities, with high potential for application in flexible electronics.