Interface engineering for two-dimensional semiconductor transistors. (April 2019)

• Record Type: Journal Article
• Authors: Jiang, Bei; Yang, Zhenyu; Liu, Xingqiang; Liu, Yuan; Liao, Lei
• Is Part Of: Nano today. Volume 25(2019)
• Page Start: 122
• Page End: 134
• Publication Date: 2019-04
• Subjects: 2D materials -- Field effect transistors -- Contact -- Dielectric -- Surface charge transfer -- Intercalation; Nanotechnology -- Periodicals; Nanosciences -- Périodiques; 620.505
• DOI: 10.1016/j.nantod.2019.02.011
• Languages: English
• ISSNs: 1748-0132

Abstract

Graphical abstract: Highlights: The recent interface engineering approaches for 2D semiconductor transistors towards high-quality fabrication technologies and high-performance electronic are compared. Four types of interfaces in 2D material field-effect transistors are discussed in detail, including the 2D/metal contact, 2D/dielectrics, 2D/adsorbate and 2D/2D interface. Assembling 2D FETs by van der Waals methods has been demonstrated to be an effective way to remain the electronic properties of 2D semiconductors. Abstract: Benefiting from the atomically thin body thickness of two-dimensional (2D) materials, field-effect transistors with 2D semiconductor as active channel enables enhanced electrostatic gate coupling for next-generation nanoelectronics. On the other hand, due to the atomic thin body and delicate lattice of 2D material, high-quality interfaces are essential to preserve the superior performance of the transistors, which is recognized as a key challenge within dangling-bond free 2D surface. Herein, we review and highlight recent state-of-the-art advances on interface engineering of high-performance 2D materials transistors, including contact engineering, dielectric engineering, surface charge transfer doping engineering, and intercalation engineering, and outlook the opportunities and challenges for developing 2D materials for low-power, high-performance microelectronics.